Imodeli | I-BAT-NEBMS-SE601000400-V001 |
Ipharamitha | Ibanga |
Amandla kagesiokhipha Peranalogcell | 100mv~5000mV |
Umthamo wokulayisha wamanje ngeseli ye-analog ngayinye | 3A |
Ukunemba kwamanje kwesilinganiso seseli ye-analog | ±0.5mA |
Ibanga lokushisa le-analog voltage okukhiphayo | -3.0V~+4.5V |
Izinga lokushisa le-analog voltage okukhiphayoukunemba | ±0.5mV |
Ibanga eliqhubekayo lokuphuma kwamandla kagesi aphezulu | 10 ~ 1000V |
Ukunemba okuqhubekayo kokuphuma kwamandla kagesi aphezulu | ±(0.1%RD+100mV) |
Ukunemba okuqhubekayo kwesilinganiso sikagesi ophezulu | ±(0.1%RD) |
I-voltage ephezulu eqhubekayo evunyelwe umkhawulo wamanje wamanje | 0 ~ 100mA |
Ukunemba okuqhubekayo kwesilinganiso samandla kagesi aphezulu | 0.05%RD+50uA |
Inombolo yamandla kagesi aphezulu njalo | 1 CH (ingafaka amamojula amaningi) |
Ibanga le-resistor elilungisekayo | 2Ω~1MΩ |
Ukunemba kwe-resistor okulungiswayo | 0.2%RD+1.0Ohm |
Ibanga le-PWM Frequency | 1Hz~500KHz |
Ibanga elivumelekile lezinga eliphezulu lamandla kagesi | -12V~12V |